面阵CCD时序抗弥散方法研究  

Research of Area CCD Clock Antiblooming Method

作　　者：董龙[1] 李涛[1] 

机构地区：[1]北京空间机电研究所,北京100076

出　　处：《航天返回与遥感》2012年第6期86-92,共7页Spacecraft Recovery & Remote Sensing

摘　　要：文章通过讨论n沟道CCD的物理结构以及两种CCD饱和弥散(弥散型饱和状态和表面型饱和状态)的差异,介绍了面阵CCD抗弥散技术,它通过改变垂直转移时序使普通CCD具有抗弥散功能。对采用该技术前后相机抗弥散的实际效果进行了对比,进一步研究了面阵CCD时序抗弥散所必需的表面型饱和高电平偏置电压测定方法、低电平电压偏置测定方法以及时序工作频率标定方法,给出了工程实现的具体途径。总结了时序抗弥散技术的优缺点,列出了该技术的使用范围和限制条件。The physical structure of n-buffed channel CCD and the differences between Bloomed Full Well and Surface Full Well are discussed. The working principle of clock antiblooming is introduced. Changing the vertical transfer timing can improve antiblooming function of CCD. The results before-and-after antiblooming are compared. The calibration methods of bias voltage of Surface Full Well high-level and low-level and frequency condition in operation of CCD clock antiblooming are discussed, and the specific way of engineering realization is presented. The advantages and disadvantages are summarized, the range and constraints of applicability are summed up.

关 键 词：抗弥散 表面型饱和 N沟道 电荷耦合器件 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]