吸收对一维光子晶体中全反射隧穿效应的影响  

Influence of Absorption on the Total Reflection Tunneling Effect of 1D Photonic Crystal

作　　者：代洪霞[1] 刘启能[1] 

机构地区：[1]重庆工商大学计算机科学与信息工程学院,重庆400067

出　　处：《半导体光电》2012年第6期842-845,共4页Semiconductor Optoelectronics

基　　金：重庆市教委科技基金项目(KJ100717)

摘　　要：引入复折射率的概念,利用特征矩阵法研究了材料的吸收对光子晶体全反射隧穿效应的影响。通过数值计算研究了光子晶体的全反射隧穿峰随材料消光系数和周期光学厚度的变化规律。全反射遂穿峰的峰高随消光系数的增加而降低,全反射遂穿峰的频率不受消光系数的影响。全反射隧穿峰的频率和频率宽度都随周期光学厚度的增加而减小。By introducing the concept of complex refractive index,the influence of absorption on the total reflection tunneling effect of 1D photonic crystal was studied by the characteristic matrix method.The response curves of the total reflection tunneling versus extinction coefficient and cycle optical thickness were calculated.It is indicated that the peak height of total reflection tunneling decreases with the increasing extinction coefficient,but its frequency is independent of the extinction coefficient.The frequency and frequency width of total reflection tunneling decrease with the increase of the cycle optical thickness.

关 键 词：光子晶体 全反射 隧穿效应 吸收 

分 类 号：O436[机械工程—光学工程]