IGBT开关瞬态的温度特性与电热仿真模型  

Temperature Characteristioc and Electric-Thermal Model of IGBT Switching Transient

作　　者：唐勇[1] 汪波[1] 陈明[1] 

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033

出　　处：《电工技术学报》2012年第12期146-153,共8页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重点项目(50737004)

摘　　要：由于半导体的材料特性随温度的变化发生改变,采用硅材料制造的绝缘栅双极型晶体管(IGBT)的工作特性受温度的影响也十分显著,开关瞬态过程将随温度发生较大变化。针对不同温度下的开关过程开展了测试实验,发现IGBT的开通与关断瞬态具有不同的温度特性,根据实验现象对IGBT的开关过程进行了分析,得出IGBT开关瞬态的温度特性主要是受载流子寿命影响的结论。对IGBT电热模型的基本原理以及现有模型方法进行了分析,根据实验中得出的结论,提出了一种改进的IGBT电热模型。基于该模型对IGBT关断时的电流拖尾过程以及整个开关瞬态过程开展了电热仿真分析,通过仿真波形与实测波形的比较,验证了实验中得出的结论以及该模型的准确性。Material characteristics of semiconductor depend on temperature,thus performance and switching transient of silicon IGBT is greatly affected by temperature.Through the experiments of switching transient under different temperature,it is found that IGBT＇s turn-on and turn-off transients have different temperature characteristics.According to the analysis of the experimental phenomenon,a conclusion is obtained that the temperature characteristic of switching transient is mainly affected by carrier life.Thereby,based on the existing methods,an improved eletro-thermal model of IGBT is proposed.Then the model is used to simulate the turn-off tail current and the whole switching transient of IGBT.With the comparison between simulation and experiment waveforms,the above conclusion is validated and the model is also approved to be accurate.

关 键 词：绝缘栅双极型晶体管 开关瞬态 温度特性 电热模型 仿真研究 

分 类 号：TN322[电子电信—物理电子学]