NiFe2O4外延薄膜的制备及后退火效应研究  

FABRICATION AND POST-ANNEALING EFFECT OF NiFe_2O_4 EPITAXIAL FILMS

作　　者：梁艳[1] 宣晓峰[1] 吴文彬[1] 

机构地区：[1]中国科学技术大学材料科学与工程系,合肥微尺度物质科学国家实验室(筹),合肥230026

出　　处：《低温物理学报》2013年第1期52-55,共4页Low Temperature Physical Letters

摘　　要：本文利用脉冲激光沉积方法制备了NiFe2O4磁性绝缘薄膜.X-射线衍射线性扫描测量表明,在MgO(110)单晶衬底上可以生长出高质量的NiFe2O4外延薄膜,原子力显微镜显示其具有平整的表面形貌.我们还研究了后退火处理对样品结构、表面形貌和磁性的影响.结果表明,后退火后薄膜的结构和表面形貌都发生了明显的改变,样品的磁性得到增强.这些效应可归结为在氧气氛下退火处理导致的氧含量的变化以及退火过程中阳离子分布和价态发生改变.Magnetic-insulating NiFe2O4 epitaxial thin films were grown on MgO（110） single crystal substrates by the pulsed laser deposition method. All the films exhibit high epitaxial quality and smooth surface as revealed by X- ray diffraction linear scans and the atomic force microscopy. We investigated the post annealing effect on their structure, surface morphology, and magnetic properties. The structure and surface morphology of the films have greatly changed after the post annealing due to the oxygen uptake during the thermal treatment in oxygen atmosphere. Besides, because of the change of cation distribution and valence states during the post annealing, the magnetization of the films was enhanced.

关 键 词：NIFE2O4 外延薄膜 磁性 

分 类 号：O484.1[理学—固体物理]