基于MOSFET设计优化的功率驱动电路  

Based on the MOSFET design optimization of power drive circuit

作　　者：李小艳[1] 武振宁[1] 李方军[1] 

机构地区：[1]西安电子工程研究所,西安710100

出　　处：《电子元器件应用》2012年第11期17-18,24,共3页Electronic Component & Device Applications

摘　　要：在分析了功率MOSFET其结构特性的基础上,讨论驱动电路的设计,从而优化MOSFET的驱动性能,提高设计的可靠性。the analysis of the power of MOSFET and its structure characteristics on the basis of discussion, driver circuit design, so as to optimize MOSFET driving performance, improve the reliability of the design.

关 键 词：MOSFET 急聚点 损耗 

分 类 号：TN386.1[电子电信—物理电子学]