钪钨基体钡钨热阴极发射性能研究  

Tungsten matrix barium tungsten cathode emission properties of

作　　者：曹贵川[1] 林祖伦[1] 祁康成[1] 王小菊[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子元器件应用》2012年第11期21-24,共4页Electronic Component & Device Applications

摘　　要：为获得电子发射性能优异的含钪钡热钨阴极,采用液固掺杂、掺杂钨粉还原、等静压制、高温烧结、浸渍发射物质等工艺,制备出钪钨基体钡钨热阴极。对该阴极的发射性能测试结果显示,在阴极温度分别为950℃、1050℃、1100℃时,脉冲发射电流密度分别为53.6A/cm2、65.7A/cm2、79A/cm2。分析认为,由于氧化钪均匀地覆盖在钨颗粒的表面,氧化钪与钨接触面增多,使氧化钪与钨的结合力增大,因此该阴极具有均匀性良好的热电子发射,较好的抗离子轰击能力。in order to obtain the emission performance of SC containing barium tungsten cathode heat, using liquid-solid doping, doped tungsten powder reduction, isostatlc pressing, siuterlng temperature, impregnation emitting substance such as technology, preparation of tungsten matrix barium tungsten cathode. On the cathode emission performance test results show, in the cathode temperature were 950℃, 1050 ℃, 1100 ℃, pulse emission current density were 53.6 A/cm^2, 65.7 A/cm^2. 79 A/cm^2 The analysis thinks, as a result of scandium oxide is covered uniformly on the surface of tungsten particles, scandium oxide with tungsten contact surface increases, make the scandium oxide and tungsten binding force is increased, therefore the cathode has excellent uniformity of hot electron emission, high ion bombardment resistance ability.

关 键 词：氧化钪 掺杂 钡钨阴极 发射特性 电流密度 

分 类 号：TN8[电子电信—信息与通信工程]