半导体激光端面泵浦Nd:YVO_4/KTP固体激光的实验研究  

Experimental study of diode laser end-pump Nd:YVO_4/KTP solid laser

作　　者：裴世鑫[1] 孙淑丹[1] 崔芬萍[1] 

机构地区：[1]南京信息工程大学物理与光电工程学院,南京210044

出　　处：《南京信息工程大学学报（自然科学版）》2012年第6期559-563,共5页Journal of Nanjing University of Information Science & Technology（Natural Science Edition）

基　　金：江苏省自然科学基金(BK2011829);江苏省高校"青蓝工程"中青年学术带头人培养对象(2010-2013)

摘　　要：搭建了一套以中心输出波长为808.5nm的半导体激光端面泵浦Nd:YVO4激光晶体产生1064nm红外激光,然后以腔内KTP晶体倍频的方法将红外激光倍频为532nm绿光激光的固体激光实验系统,研究了808.5nm的泵浦半导体激光的输出功率与注入电流的关系及与532nm绿光输出功率的关系,以及KTP倍频晶体的相位匹角、泵浦光的聚焦位置和固体激光器的腔长等因素对532nm绿光输出功率的影响.实验结果表明:提高泵浦半导体激光的泵浦功率、缩短固体激光器的腔长、将泵浦光聚焦到Nd:YVO4晶体内部以及正确选择KTP晶体的相位匹配角能够提高532nm绿光的输出功率.A diode laser end-pumped Nd： YVOJKTP solid laser experimental system is built. The system starts from a single diode laser with center output wavelength at 808.5 nm to end-pump Nd：YVO4 laser crystal and pro- duce 1 064 nm infrared laser, which is then swithed to 532 nm green laser through intracavity frequency-doubling by a KTP crystal inside the laser cavity. The relationship between 808.5 nm diode laser output power and the injection current, and the relationship between diode laser pump power and 532 nm green laser output power is studied by ex- periments. The influencing factors of the 532 nm green laser output power, including the phase-matching angle of KTP frequency-doubling crystal, the pump laser focus to the Nd ： YVO4 laser crystal position, and the length of solid- state laser cavity are also studied and analyzed. The experimental results demonstrate that the output power of 532 nm green light can be enhanced through increasing the pump diode laser output power, or decreasign the length of solid laser cavity, or turning the pump diode laser focus into the Nd：YVO4 laser crystal, or adjusting the KTP crystal phase-matching angle correctly.

关 键 词：非线性光学 端面泵浦 ND YVO4晶体 KTP倍频晶体 

分 类 号：TN248.1[电子电信—物理电子学]