ZnSe_(1-x)S_x-ZnSe应变超晶格结构光致发光研究  

Photoluminescence Study of ZnSe_(1-x)S_x-ZnSe Strained-Layer Superlattice

作　　者：关郑平 范广涵[1] 宋世惠 范希武[1] 

机构地区：[1]中国科学院长春物理研究所,130021

出　　处：《Journal of Semiconductors》1991年第3期165-171,共7页半导体学报（英文版）

基　　金：863高技术课题;国家自然科学基金

摘　　要：本文研究了ZnSe_(1-x)S_x-ZnSe应变超晶格结构在77K时自由激子的光致发光的线型随激发光密度、势阱涨落、势垒高度的涨落及各层厚对超晶格发光峰E_(?)的影响,并利用Kronig-Penney模型计算了n=1的激子峰值能量与势阱宽度、势垒高度涨落的关系.首次从实验上分析了77-250K温度范围内ZnSe_(1-x)S_x-ZnSe应变超晶格激子发光的线型与各参量的密切关系.Photoluminescence (PL) technique is used to diagnose the quality of ZnSe_(1-x)S_x-ZnSeSLS. The influence of excitation defnsity,fluctuations of well thickness and barrier heighton the fluorescence spectra of SLS are discussed. The relation of the fluctuations of well thi-ckness and barrier height to the broadening of n=1 exciton energies are calculated usingKronig-Penney model. We have analysed for the first time the relation of exciton lineshapeto each growth parameter in the temperature range from 77 K to 250 K for ZnSe_(1-x)S_x-Zu-Se SLS.

关 键 词：ZnSeS/ZnSe 超晶格 结构 光致发光 

分 类 号：TN304.26[电子电信—物理电子学]