Si_3N_4膜pH-ISFET输出特性研究  

Output Characteristics of pH-ISFET with Si_3N_4 as Ion Sensitive Film

作　　者：虞惇 魏亚东[1] 王贵华[1] 

机构地区：[1]哈尔滨工业大学,哈尔滨150006

出　　处：《Journal of Semiconductors》1991年第4期253-256,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：通过对 pH-ISFET的长时间测量,发现器件的输出偏离 Nernst方程.提出了器件输出由快响应、慢响应和时漂三部分组成,以及器件响应与时漂数据的提取方法.证明了快慢响应的共同作用符合Nernst方程,慢响应的响应幅度小,长达数小时之久.在响应初期观察到的器件漂移,主要是慢响应造成的.The output characteristics of a pH-ISFET deviate from the Nernst equation after long-time measurement. To explain such a deviation, it is proposed that the device output consistsof fast response, slow response and drift. Based on the proposed method to separate the de-vice response and drift from the device output, the common contribution of both responses isin good agreement with Nernst equation.The slow response of the device, which is only asmall part of the total response lasts for several hours.The output instability of a pH-ISFETduring the initial period after the change of pH solution is mainly due to the slow response.

关 键 词：Si3N4膜 ISFET 输出特性 

分 类 号：TN386[电子电信—物理电子学]