KTiOAsO_4晶体的生长缺陷研究  

Research on the Growth Defects of KTiOAsO_4 Crystal

作　　者：牟其善[1] 刘希玲[1] 马长勤[2] 王绪宁[2] 路庆明[2] 

机构地区：[1]山东教育学院数理系 [2]山东大学化学院,济南250100

出　　处：《无机材料学报》2000年第4期584-588,共5页Journal of Inorganic Materials

基　　金：山东省自然科学基金资助项目!(Y98A15018)

摘　　要：研究ＫＴｉＯＡｓＯ_４晶体的生长缺陷，对于改善它的性能和应用前景，有很大的意义．本文利用化学腐蚀光学显微术和同步辐射Ｘ射线形貌术研究了ＫＴｉＯＡｓＯ_４晶体的缺陷，实验结果表明，两种腐蚀剂对于显示ＫＴＡ晶体的表面缺陷效果显著，ＫＴＡ晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物．讨论了这些缺陷形成的原因。It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.

关 键 词：KTiOAsO4 缺陷 铁电醇 晶体生长 非线性光学晶体 

分 类 号：O77[理学—晶体学] TN204[电子电信—物理电子学]