对氢化非晶硅薄膜Raman谱TA模的观测  

Observation on TA Mode of Raman Scattering for a-Si:H Films

作　　者：何宇亮[1] 程光煦[2] 

机构地区：[1]南京大学物理系,南京210008 [2]南京大学现代分析中心及固体微结构国家实验室,南京210008

出　　处：《Journal of Semiconductors》1991年第9期542-545,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：对a-Si:H及μC-Si:H膜的Raman散射谱的观测中,出现了类TA 模强度高于类TO模的情况.在非晶硅薄膜晶化过程中,类TA模同样呈现出规则性的变化,并可同C-Si一级声子谱的TA模精细结构对应起来.说明通过分析类TA模精细结构的变化,同样可用来分析研究a-Si:H膜中结构变化及其晶化过程的规律.From the observation of Raman scattering for a-Si:H and μc-Si:H films, there appearsthat the intensity of TA-like mode is higher than TO-like mode.During the crystallizationprocess of a-Si:H films, the TA-like mode also reveals a regular variation and could torres-pond to the fine structure of the first order phonon spectrum of TA mode in c-Si Raman spec-trum. It demonstrats that the variation of fine structure of TA-like mode may also be used toanalyse the structure features and regularity of the crystallization process of a-Si:H films.

关 键 词：氢化 非晶硅 薄膜 RAMAN谱 TA膜 

分 类 号：TN304.8[电子电信—物理电子学]