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作 者:SHI Zitao CHENG Yuhua WANG Albert WANG Yangyuan
机构地区:[1]Shanghai Research Institute of Microelectronics, Peking University, Shanghai 201203, China [2]School of Information Science and Technology, Peking University, Beijing 100871, China [3]Department of Electrical and Computer Engineering, University of California, Riverside, CA 92501, USA
出 处:《Chinese Journal of Electronics》2012年第3期389-394,共6页电子学报(英文版)
摘 要:Electrostatic discharge (ESD) protection has become an emerging challenge for Radio frequency (RF) Integrated circuits (IC). This paper reports the de- sign and optimization of an ESD-aware 2.4GHz Power am- plifier (PA) circuit in a 0.18pro RFCMOS technology. A mixed-mode ESD simulation-design method and an RF ESD characterization technique are used to accurately characterize and minimize ESD-induced parasitic effects. Significant improvement can be observed by applying this ESD-aware design technique in several areas, such as gain, linearity, and power-added efficiency.
关 键 词:Power amplifier design Electrostatic dis-charge (ESD) protection Radio frequency (RF) design In-tegrated circuit (IC) design ESD-aware IC design
分 类 号:TN925.93[电子电信—通信与信息系统] TM08[电子电信—信息与通信工程]
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