氧空位对SrBi_4Ti_4O_(15)铁电陶瓷电性能的影响  

Effect of Oxygen Vacancies on the Electrical Properties of SrBi_4Ti_4O_(15) Ceramics

作　　者：王晓军[1] 雒卫廷[1] 

机构地区：[1]吕梁学院物理系,山西吕梁033300

出　　处：《山西大同大学学报（自然科学版）》2012年第6期20-22,25,共4页Journal of Shanxi Datong University(Natural Science Edition)

基　　金：山西省高校科技研究开发项目[20111030];山西省大学创新实验项目[2011381]

摘　　要：用高温固相烧结法制备了SrBi4Ti4O15(SBTi)铁电陶瓷,用双氧水浸泡72 h进行氧处理的样品与未经过氧处理的样品进行对比研究。样品的介电损耗谱表明:氧处理使SBTi在20℃～300℃温度范围内的介质损耗明显降低,这主要是由于氧处理使样品中氧空位浓度降低引起的。在温度高于300℃时,经过氧处理的样品的介质损耗迅速增大,这是因为氧处理使空穴载流子浓度增大。通过对材料的直流电导与温度关系的Arrhenius拟合,分析了SBTi的导电机理。结果表明,氧处理并未明显改变样品在300℃～650℃温度区域的载流子激活能,却使其在20℃～300℃范围内的激活能从0.52 eV变化到0.71 eV。SrBi4Ti4015 （SBTi） layer-structured ferroelectric ceramics were prepared by the high temperature solid-phase reaction method. Study on the sample that dipped in H202 ambient for 72 h and the sample without oxygen treatment, then compared. Dielectric loss of SBTi ceramics as a function of temperature show dielectric loss of the sample processed in H2O2 ambient decrease in the temperature range 20 ℃ ～300 ℃, but increase in the temperature range 300 ℃ ～ 650 ℃. This is mainly because the concentration of oxygen vacancy bring down after oxidation treatment in lower temperature, and the concentration of hole charge carries enhance in higher temperature. Electric conductor mechanism of SBTi was analyzed by the Arrhenius fit of direct current conductivity vs temperature. The results show that H202 treatment has not obviously effect on the activation energy of SBTi in the temperature range of 300℃ to 650 ℃. Nevertheless, the activation energy of SBTi increase from 0.52 ev to 0.71 ev after H202 treatment in the temperature range from 20 ℃to 300 ℃.

关 键 词：氧空位 SRBI4TI4O15 激活能 

分 类 号：O482.54[一般工业技术—材料科学与工程] TM271.4[理学—固体物理]