超小绝缘硅微环陷波滤波器特性分析  

Characteristic analysis of ultra-small silicon-on-insulator micro-ring resonator notch filter

作　　者：王巍[1] 杨丽君[1] 杨铿[1] 张爱华[1] 谢玉亭[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《红外与激光工程》2012年第12期3298-3304,共7页Infrared and Laser Engineering

摘　　要：设计了基于SOI结构的超小微环陷波滤波器,该滤波器便于集成且可实现深度陷波。根据对全通结构微环谐振腔的传输特性分析得知,为得到好的陷波特性就必须增加波导间的耦合强度。在相同半径的全通微环谐振环结构中,耦合系数主要与3个参数(波导宽度、间距以及耦合区域的长度)有关。通过理论计算及仿真分析,对以上3个参数对陷波滤波器输出光谱响应的影响进行了讨论。实验结果表明,陷波滤波器越接近临界耦合条件(r=a)时,消光比越高。此时,消光比达36 dB以上,滤波器的FSR约为72 nm。An ultra-small silicon-on-insulator micro-ring resonator notch filter was designed based on SOI, which was easy to integrate and achieve deep notch at the output port. The analysis of the transmission characteristics of the all-pass SO1 micro-ring resonator structure showed that the coupling strength between the waveguides should be big enough in order to get good notch characteristics. For the same radius all-pass micro-ring resonator structure, the coupling coefficient was mainly related to three parameters （waveguide width, spacing and length of the coupling region）. The effect of the three parameters on the output spectral response of the notch filter were discussed. Experimental results show that the more the notch filter approaches the critical coupling condition （r=a）, the higher extinction ratio will be. Meanwhile when the extinction ratio is up to 36 dB, the FSR is about 72 nm

关 键 词：微环陷波滤波器 耦合系数 陷波特性 

分 类 号：TN256[电子电信—物理电子学] TN713