Nanogrinding of SiC wafers with high flatness and low subsurface damage  

高平整度和低损伤碳化硅晶片的纳米磨削技术(英文)

作　　者：霍凤伟[1] 郭东明[1] 康仁科[1] 冯光[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,大连116024

出　　处：《Transactions of Nonferrous Metals Society of China》2012年第12期3027-3033,共7页中国有色金属学报（英文版）

基　　金：Project (50975040) supported by the National Natural Science Foundation of China

摘　　要：Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.采用细粒度砂轮的纳米磨削来实现碳化硅晶片高平整度和低损伤加工新方法。磨削试验表明采用纳米磨削50.8mm碳化硅晶片时其平整度在1.0μm以内,表面粗糙度可达0.42nm。纳米磨削比双面研磨和机械抛光更能高效地对碳化硅晶片做更高平整度、更低损伤加工,可以取代双面研磨和机械抛光,并减小化学机械抛光去除量。研究结果对高效低成本制备高质量碳化硅晶片有参考价值。

关 键 词：SiC wafer nanogrinding cup wheel FLATNESS surface roughness DAMAGE 

分 类 号：TQ163.4[化学工程—高温制品工业]