Ka波段高效率GaAs功率放大器MMIC  

Ka-Band High Efficiency GaAs Power Amplifier MMIC

作　　者：杜鹏搏[1] 张务永[1] 孙希国[1] 崔玉兴[1] 高学邦[1] 付兴昌[1] 吴洪江[1] 蔡树军[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第2期97-100,共4页Semiconductor Technology

摘　　要：采用GaAs PHEMT工艺,研究了PHEMT器件材料结构和大信号建模,分析了如何提高电路效率,并利用ADS软件对电路进行了原理图与版图优化设计,成功研制了高效率Ka波段GaAs功率放大器MMIC。电路采用三级级联放大,各级选取合适的总栅宽,使用Wilkinson功率分配/合成网络,采用阻性网络消除奇模振荡,输入输出均匹配至50Ω。在36～40 GHz频带内测试,测试结果表明:饱和输出功率大于2 W,功率增益大于17 dB,功率附加效率大于20%,频带内最高效率高达25%,芯片尺寸3.7 mm×3.2 mm。Using GaAs PHEMT technology, the structure of PHEMT and large signal model extraction were discussed, the method to raise the efficiency was analyzed, the schematics and layout were designed and optimized using ADS, the Ka-band MMIC power amplifier was successfully developed. The circuit consists of three-stage and the gate width of each stage were carefully selected. The wilkison power dividing/combining network was used in the circuit. The stability, especially odd mode stability was carefully designed by utilizing the resistive networks. The input and output impedances were matched to 50 Ω. The test result shows that the circuit exhibits an output power above 2 W with power gain above 17 dB and a power added efficiency above 20% and a peak power added efficiency achieved 25% at the frequency from 36 GHz to 40 GHz. The chip size is 3.7 mm × 3.2 mm.

关 键 词：砷化镓 KA波段 单片微波集成电路 功率放大器 高效率 

分 类 号：TN722.75[电子电信—电路与系统] TN304.23