基于周期特性的双岛单电子晶体管主方程模拟及改进  

Master-Equation Simulation of Double-Island Single-Electron Transistor Based on Periodical Characteristics

作　　者：隋兵才[1] 高军[1] 陈小保[1] 张超[1] 方粮[1] 

机构地区：[1]国防科学技术大学计算机学院,长沙410073

出　　处：《上海交通大学学报》2013年第1期149-154,共6页Journal of Shanghai Jiaotong University

基　　金：核高基重大专项课题(2009ZX01028-002-002);国家自然科学基金项目(61106084);信息保障技术重点实验室项目(KJ-11-04)

摘　　要：以双岛单电子晶体管(SET)为研究对象,采用稳态图和蒙特卡洛法分析双岛SET的周期特性,选取其中的7个典型状态,提出了双岛SET的简化主方程模拟方法,并利用分析所得SET的周期特性而改善简化主方程模拟方法的局限性.结果表明,所提出的模拟方法能够有效模拟双岛SET的电流和电压特性,并能扩展到多岛单电子晶体管.The periodical characteristics of double-island single-electron transistor （SET） were analyzed by stable diagram and Monte-Carlo method. Seven typical states were selected to simplify the master-equation simulation, and to improve the limitation of the method by the periodical characteristics. The result shows that the proposed method can efficiently simulate the current and voltage character of double-island SET, and can be simply extended to multi-island SETs, which is very useful for the VLSI of multi-island SETs.

关 键 词：单电子晶体管 主方程 周期特性 

分 类 号：TP332.1[自动化与计算机技术—计算机系统结构]