离子束溅射组装均质Cu-W膜不同铜钨靶功率、气压对膜结构的影响  

Effects of Target Power and Working Gas Pressure on Microstructure of Copper-Tungsten Homogeneous Film Prepared by Magnetron Sputtering

作　　者：李久明[1] 王珍吾[1] 艾永平[1] 刘祥辉[1] 刘利军[1] 

机构地区：[1]井冈山大学建筑工程学院新型低碳环保建材研究所,江西吉安343009

出　　处：《材料保护》2013年第1期35-36,55,共3页Materials Protection

基　　金：国家自然科学基金(31060134);(81260230);吉安市2011年指导性科技计划项目资助

摘　　要：目前,对磁控溅射组装Cu-W均质复合膜的工艺及成膜机理研究不够深入。通过磁控溅射组装均质Cu-W薄膜,考察了溅射工艺参数对膜结构的影响。结果表明:直流磁控溅射组装均质Cu-W薄膜时,钨是以β-钨为骨架固溶进部分铜的方式存在;随铜靶功率的增加,铜的晶粒尺寸先变大后变小;随钨靶功率的增大,β-钨有向非晶态转变的趋势,且铜的晶粒尺寸会明显变小;薄膜的沉积速率主要由钨靶功率决定;工作气体氩气气压低于1.0 Pa时,随气压升高,铜的晶粒尺寸变小,高于1.0 Pa时,气压对薄膜结构没有影响。Cu-W homogeneous film was prepared by magnetron sputtering.The effects of magnetron sputtering parameters(target power and working gas pressure) on the microstructure of as-prepared Cu-W film were investigated.It was found that W in as-prepared Cu-W homogeneous film formed solid solution with Cu in the presence of β-W as the skeleton.The size of Cu grains initially rose but declined later with increasing power of Cu target.Besides,β-W tended to transform into amorphous state with rising power of W target,and the size of Cu grains significantly declined therewith,while the deposition rate of Cu-W film was mainly dependent on the power of W target.In the meantime,the size of Cu grains tended to decline with increasing working gas(Ar gas) pressure when the Ar gas pressure was below 1.0 Pa,but the working gas pressure had no effect on the microstructure of as-prepared Cu-W coating when it was above 1.0 Pa.

关 键 词：Cu—W均质薄膜 磁控溅射 晶粒尺寸 靶功率 气压 

分 类 号：TG174.44[金属学及工艺—金属表面处理]