单层硫化钼的研究进展  

Research Progress of the Single-Layer MoS_2

作　　者：顾伟霞[1] 马锡英[1] 

机构地区：[1]苏州科技学院数理学院,江苏苏州215011

出　　处：《微纳电子技术》2013年第2期81-85,共5页Micronanoelectronic Technology

基　　金：国家自然基金项目(60976071);苏州市科技计划项目(SYG201121)

摘　　要：单层硫化钼(MoS2)是具有直接帯隙1.8 eV的二维半导体,因其特殊的六方晶系层状结构,而具有优异的物理和化学性质。简要介绍了MoS2材料的几种主要制备方法:如高温硫化法、水热法以及表面活性剂促助法等,讨论了各种制备方法在国内外的研究现状及优缺点。给出了单层MoS2在晶体管、集成电路、逻辑运算等方面的一些应用。与硅晶体管相比其晶体管体积更小、更省电,并可减少短通道效应,电流开/关比例高于1010。这些应用说明了其可被广泛应用于未来的纳米电子器件。最后,对MoS2未来的发展方向进行了展望,认为工艺制备方法有待进一步改善,单层MoS2的应用领域也有待进一步深入拓展。The single-layer molybdenum disulfide （MoS2） is a two-dimensional semiconductor with a direct band gap of 1.8 eV and has excellent physical and chemical properties from its spe- cial layered structure of the hexagonal system. Some main preparation methods of MoS2 , such as the high-temperature vulcanization method, hydrothermal method and surfactant-assisted method are introduced, and the respective research status, advantages and disadvantages of various methods at home and abroad are discussed. Some applications of the single-layer MoS2, such as transistors, integrated circuits and logic operations are presented. The corresponding transistors have smaller volume and power consumption than that of Si transistors, can decrease the short channel effect, and the on/off current ratio exceeds 10^10. All these applications show that MoS2 can be widely used in future nano-electron devices. Finally, the development directions of MoS2 in the future are prospected. The fabrication methods and the application fields of the single-layer MoS2 will be improved and expanded.

关 键 词：硫化钼(MoS2) 高温硫化法 水热法 表面活性剂促助法 纳米电子器件 

分 类 号：TN304.25[电子电信—物理电子学]