衬底负偏压及溅射功率对SiO_2/Cu薄膜形貌的影响  

Effects of the Substrate Negative Bias and Sputtering Power on the Morphologies of SiO_2/Cu Thin Films

作　　者：田小丽[1] 张敏刚[1] 陈峰华[1] 

机构地区：[1]太原科技大学,太原030024

出　　处：《微纳电子技术》2013年第2期86-89,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61178067)

摘　　要：采用射频磁控溅射镀膜技术,分别以不同的衬底负偏压和射频溅射功率下在p型Si(100)基片上制备了SiO2/Cu薄膜。用原子力显微镜(AFM)对薄膜的表面形貌进行扫描分析,实验结果表明,衬底负偏压和射频溅射功率对SiO2/Cu薄膜的表面形貌都有显著的影响。衬底负偏压在0～15 V内,薄膜表面颗粒尺寸和均方根粗糙度都随着衬底负偏压的增大呈减小的趋势,而溅射功率在100～200 W内,薄膜表面颗粒尺寸和均方根粗糙度都随溅射功率的升高呈增大的趋势。成膜初期是层状生长模式,后期为岛状生长模式,整个成膜过程是典型的层岛生长模式。SiO2/Cu thin films were deposited on p-type Si（100） substrates at different substrate negative biases and RF sputtering powers with the RF magnetron sputtering technique. The sur- face morphologies of the thin films were scanned by AFM. The experimental results show that the surface morphologies of the SiO2/Cu thin films are significantly affected by the substrate negative bias and RF magnetron sputtering power. The surface particle size and root mean square roughness of the films both decrease with the increasing of the substrate negative bias at 0 - 15 V, and increase with the rising of the sputtering power at 100- 200 W. The thin films grow in the layer mode at the early state, in the island mode at the later stage and in the typical layerisland mode in the whole process.

关 键 词：射频磁控溅射 衬底负偏压 溅射功率 薄膜 形貌 

分 类 号：O484.5[理学—固体物理]