Ba_(0.5)Sr_(0.5)TiO_3薄膜电容的尺寸效应研究  

Dimension effects on the properties of Ba_(0.5)Sr_(0.5)TiO_3 thin film capacitors

作　　者：许程源[1] 肖勇[1] 张光强[1] 蒋书文[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2013年第2期29-32,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50972024;No.60871049)

摘　　要：采用射频磁控溅射和微细加工技术制备了不同尺寸的钛酸锶钡(Ba0.5Sr0.5TiO3,BST)平行板电容,研究了低频和高频条件下不同尺寸BST平行板电容的电容密度和Q值的变化情况。结果表明,由于存在边缘效应,BST薄膜电容的电容密度及Q值都具有尺寸效应。低频时,随着电容面积增大,电容密度减小,Q值增大。高频时,随着电容面积增大,电容密度及Q值减小。Barium strontium titanate （Ba0.5Sr0.5TiO3, BST） thin film parallel plate capacitors with different sizes were fabricated by using the radio frequency magnetron sputtering and microfabrication techniques. And, the effects of size on the capacitance density and quality factor of the BST capacitors at low and high frequencies were studied. The results show that both the capacitance density and quality factor of the BST capacitors are size dependent. At low frequencies, the capacitance density decreases while the quality factor increases with the increase in the size of the top electrode. At high frequencies, both the capacitance density and quality factor decrease with the increase in the top electrode size.

关 键 词：钛酸锶钡(BST) 薄膜 尺寸效应 平行板电容 Q值 

分 类 号：TM53[电气工程—电器]