室温制备低电阻率高透过率H,W共掺杂ZnO薄膜  

Room temperature deposition of highly conductive and transparent H and W co-doped ZnO film

作　　者：王延峰[1] 张晓丹[1] 黄茜[1] 刘阳[1] 魏长春[1] 赵颖[1] 

机构地区：[1]天津市南开区南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《物理学报》2013年第1期448-454,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2011CBA00706;2011CBA00707);国家自然科学基金(批准号:60976051);教育部新世纪人才项目(批准号:NCET-08-0295);教育部重点实验室开放课题(批准号:2011KFKT06);中央高校基本科研业务费专项资金(批准号:65011981)资助的课题~~

摘　　要：采用脉冲直流磁控溅射法,以WO3:ZnO陶瓷靶为溅射靶材,通过在溅射气氛中引入H2的方式,在室温条件下制备了低电阻率、高可见和近红外光区透过率的H,W共掺杂ZnO(HWZO)薄膜.系统地研究了H2流量对所制备的HWZO薄膜的结构、组分、元素价态、光电特性的影响.结果表明:掺入的H可促进Zn的氧化,改善薄膜的结晶质量,提高薄膜透过率.H引入之后薄膜的载流子浓度增加,电阻率降低.在H2流量为6mL/min时制备的HWZO薄膜性能最优,电阻率为7.71×10-4 Ω·m,光学带隙为3.58eV,400—1100nm的平均透过率为82.4%.Highly conductive and transparent hydrogen and tungsten co-doped zinc oxide （HWZO） thin films are prepared at room temper- ature by pulsed DC magnetron sputtering using a WZO （98.5 wt.% ZnO, 1.5 wt.% WO3） ceramic target with different H2 flow rates. The influence of H2 flow rate on the structural, compositional, elemental valence state as well as electrical and optical properties are systematically investigated. The results indicate that the incorporation of H does not change the structure of tungsten doped zinc oxide （WZO） namely, both WZO and HWZO films are polycrystalline with hexagonal structure and a preferred orientation along c-axis, respectively whereas the crystallinity is firstly improved and then deteriorated with the increase of H2 flow rate. Furthermore, the reaction between Zn and O can be promoted by the incorporated H. With an optimal H2 flow rate, the carder concentration increases from 3.32 x 1020 cm-3 for WZO film to 5.44 × 10^20 cm^-3 for HWZO film, and the resistivity decreases from 1.20 ×10^-4Ω· to 7.71 x 10-4 ~.cm. The average transmittance in a range of 400-1100 nm is improved from 69.2% to 82.4 %, and the optical band gap is widened from 3.42 eV to 3.58 eV.

关 键 词：HWZO薄膜 磁控溅射 太阳电池 

分 类 号：O484.1[理学—固体物理]