掺杂Sn,Bi的Ge_2Sb_2Te_5相变存储靶材制备和薄膜性能研究  

Targets Preparation and Thin Film Properties Based on Sn-and Bi-Doped Ge_2Sb_2Te_5 Phase-Change Memory Materials

作　　者：储茂友[1] 林阳[1] 王星明[1] 陈洋[1] 白雪[1] 韩沧[1] 

机构地区：[1]北京有色金属研究总院稀有金属冶金材料研究所,北京100088

出　　处：《稀有金属》2013年第1期60-64,共5页Chinese Journal of Rare Metals

摘　　要：在前期Ge-Sb-Te基相变存储材料Ge2Sb2Te5靶材和薄膜制备研究的基础上,分别选取掺杂5.6%(原子分数)的Sn,Bi作为添加剂对其进行掺杂改性。采用热压法制备出高主相含量、高致密度六方结构Ge2Sb2Te5基靶材。常温下沉积的薄膜为非晶态,经150～350℃退火处理,薄膜相结构经历了由非晶态到立方相再到六方相的相转变过程。掺杂5.6%(原子分数)的Sn在入射光波长为500 nm时的反射率对比度相比未掺杂薄膜提高了14%,该薄膜潜在的光存储性能更好。掺杂Sn,Bi后结晶态与非晶态间的电阻率差异度有所增加。Sn, Bi was doped in Ge2 Sb2Te5 （GST） targets which used as PCM （phase change memory） material. GST sputter targets with high main phase content and high relative density were made by hot-press sintering method. The film deposited at room tempera- ture was amorphous, after annealed at 150 - 350℃, the phase structure of the film changed from amorphous state to cubic phase and then to hexagonal phase. The reflection difference of 5.6% （ atom fraction） Sn-doped thin film increased 14% at 500 nm wavelength comparing to undoped film, which meant this material had better potential property as optical memory. The resistivity difference be- tween amorphous and hexagon state of the Sn- and Bi-doped thin films increased as to Ge2Sb2Te5.

关 键 词：相变存储 掺杂改性 靶材 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]