0603型钽电容器氧化膜的生长工艺  

Growth Process of Tantalum Capacitor Oxide Film for 0603 Size

作　　者：徐云飞[1] 李春光[1,2] 安涛[1] 吴华 

机构地区：[1]西安理工大学,陕西西安710048 [2]宁夏星日电子有限公司,宁夏银川750011

出　　处：《稀有金属材料与工程》2013年第1期190-193,共4页Rare Metal Materials and Engineering

摘　　要：研究0603型钽电容器氧化膜的生长工艺。分别就影响介质膜质量主要工艺参数:形成液类型、形成液浓度、升流密度、恒压时间进行试验,最后进行湿测漏电流,通过比较得出生长氧化膜最好的工艺参数。最后试验得出使用0.2%(体积分数)硝酸溶液以40mA/g的升流密度恒压5h能够生长质量良好的氧化膜,湿测漏电流非常低,为0.036μA。The growth process of tantalum capacitor oxide film for 0603 size was investigated. The main process parameters of dielectric film Za2O5 quality including formation fluid type, formation liquid concentration, current density and constant voltage time were employed to carry out experiments. At last DC leakage current of wet measure was collected, and through comparative experiments the best process parameters of the oxidation film growth were obtained. In conclusion, the best process parameters are 0.2% （volume ratio） nitric acid solution, 40 mA/g current density and 5 h constant voltage time. Through the best process parameters, the oxidation film quality can be improved greatly. Finally, leakage current is very small and comes to 0.036 μA

关 键 词：0603型钽电容器 形成液 形成液浓度 升流密度 恒压时间 

分 类 号：TM53[电气工程—电器]