Bi_4Si_3O_(12)-Bi_4Ge_3O_(12)赝二元系统析晶行为及其晶体生长  

Crystallization Behavior of Bi_4Si_3O_(12)-Bi_4Ge_3O_(12) Pseudo-binary System and Its Crystal Growth

作　　者：杨波波[1] 徐家跃[1] 申慧[1] 张彦[1] 陆宝亮[1] 江国健[1] 

机构地区：[1]上海应用技术学院材料科学与工程学院,上海201418

出　　处：《人工晶体学报》2013年第1期13-16,共4页Journal of Synthetic Crystals

基　　金：国家973前期专项(2011CB612310);上海市科委基础研究重点项目(11JC1412400);上海市教委重点学科(J51504)

摘　　要：本文采用固相合成方法制备了Bi4(GexSi1-x)3O12(BGSO)固溶体(x=0～0.4),研究了它的固溶特性和析晶行为。实验结果表明,不同组成混合料在900℃左右固相反应能生成BGSO纯相;XRD分析显示,在x=0～0.4区间内,Bi4Si3O12和Bi4Ge3O12可以完全互溶,其晶格常数随x的增加呈线性增长。采用坩埚下降法生长了x=0.15组成的BGSO混晶,获得了透明晶体,并测试了晶体的光学性能。Bi4（ GexSi1-x）3O12 （BGSO）solid solutions with x = 0-0.40 have been prepared by solid reaction method. The crystallization behavior was investigated. Pure BGSO phase was obtained when the mixtures of Bi203, GeO2 and SiO2 were sintered at about 900 ℃. XRD patterns showed that Bi4Si3O12 and Bi4Ge3 O12 completely dissolved into each other and the lattice increased linearly with x value. BGSO crystal with x = 0. 15 was grown successfully by the modified vertical Bridgman method. Transparent crystal was obtained and its optical properties were measured.

关 键 词：Bi4Si3O12-Bi4Ge3O12 析晶行为 坩埚下降法 晶体生长. 

分 类 号：O78[理学—晶体学]