共溅射Ni_xZn_(1-x)O薄膜的结构、磁性和电性能  

Structure,Magnetic and Electrical Properties of Ni_xZn_(1-x)O Co-sputtering Films

作　　者：王锋[1] 黄鹏飞[1] 

机构地区：[1]泉州师范学院物理与信息工程学院,泉州362000

出　　处：《人工晶体学报》2013年第1期186-191,共6页Journal of Synthetic Crystals

基　　金：福建省自然科学基金(2010J01305;E0510027)资助项目;福建省教育厅A类科技项目(JA12283);泉州市科技项目计划(2009G82012Z105);福建省高校服务海西建设重点项目(A100)

摘　　要：采用射频共溅射方法制备了NixZn1-xO(x=0.78、0.72、0.68)薄膜。薄膜有非晶相和少量的NiO结晶相的存在。样品都具有明显的室温铁磁性,退火后(TA=803 K)Ni0.78Zn0.22O薄膜的饱和磁化强度Ms可达65 emu/cm3,对应单个Ni离子磁矩大于0.13μB。低温下制备态薄膜都出现了电阻率极小值的现象,这是由于样品发生了金属-绝缘体转变。The Nix Zn1-x O（x = 0. 78 ,0. 72,0. 68 ）films were fabricated by RF co-sputtering method. The samples presenced amorphous phase and a small amount of NiO crystalline phase. The samples had manifest ferromagnetism at room temperature. The saturation magnetization Ms of Ni0.78 Zn0.22 O film reached to 65 emu/cm3 after annealed （TA = 803 K）, corresponding to a single Ni ion magnetic moment greater than 0. 13 μB- Due to metal-insulator transitions, the as-sputtered films appeared resistivity minimum phenomenon at low-temperature.

关 键 词：射频共溅射 NiZnO 铁磁性 电阻率 

分 类 号：O469[理学—凝聚态物理]