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作 者:薛晋波[1,2,3] 李雪方[1] 梁伟[1,3] 王红霞[1]
机构地区:[1]太原理工大学材料科学与工程学院,太原030024 [2]太原理工大学山西省新材料工程技术研究中心,太原030024 [3]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024
出 处:《材料工程》2013年第1期21-24,共4页Journal of Materials Engineering
基 金:国家自然科学基金资助项目(51175363);山西省科技攻关基金(20090321071);太原理工大学校青年基金(K201013)
摘 要:以SeO2,CdCl2.5/2H2O,H2SO4为原料,采用三电极体系,分别在ITO玻璃和TiO2纳米管阵列基底上沉积CdSe薄膜。研究了不同沉积电压(-0.6,-0.7,-0.8,-0.9V,均相对于SCE)下制备的复合薄膜的晶体结构和微观形貌,并测试了其光电性能。结果表明:制备出的纳米粒子呈不均匀团聚状态;随沉积电压的增大,光吸收增强,光响应电流增大,在沉积电压为-0.8V时复合薄膜的光响应电流达到最大值,但此沉积电压下的薄膜容易剥落。综合考虑薄膜质量和光响应电流,沉积电压为-0.7V时制备的复合薄膜最佳。CdSe thin films were fabricated on ITO glass substrate and TiO2 nanotube arrays by electro- chemical method in a three-electrode system in electrolyte containing SeO2, CdC12 ~ 5/2H20 and H2SO4 at room temperature. The crystalline structure and morphology of the composite films pre- pared under different deposited potentials (- 0.6, - 0.7, - O. 8, - O. 9V, vs SCE) were investigated, and the optical properties of the composite films were measured. The results show that the prepared CdSe nanoparticles are agglomerated inhomogeneously, The optical absorption and photoelectric cur- rent of composite films are enhanced with the deposited potential increasing. The film deposited under -0.8V exhibits the maximum photoelectric current, but it is easy to peel from the substrate. Accord- ing to the fastness and photocurrent response of the composite film, the suitable deposition voltage is around -0.7V for obtaining the optimum film.
关 键 词:电化学沉积 TIO2纳米管 沉积电压 CdSe纳米晶薄膜
分 类 号:TM914[电气工程—电力电子与电力传动]
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