基片和底电极对KTN薄膜结构与取向的影响  

Effects of Substrates and Bottom Electrodes on the Structure and Orientation of KTN Thin Films

作　　者：王龙海[1] 王世敏[1] 黄桂玉[1] 

机构地区：[1]湖北大学压电陶瓷技术研究所,武汉430062

出　　处：《压电与声光》2000年第3期183-185,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目!(5930 2 0 15)

摘　　要：研究了用溶胶 -凝胶 ( Sol- Gel)法在不同基片和底电极上制备 KTN薄膜的结构 ,发现基片和底电极的结构及化学稳定性直接影响到 KTN薄膜的生成和结构。详细讨论了在 Mg O( 1 0 0 )、Si( 1 0 0 )、Si O2 、Pt/Si、Sn O2( Sb) /Si O2 等基片与底电极上不能制得纯钙钛矿 KTN薄膜的原因 ,对于不与 KTN发生反应的基片 ,当基片的结构、晶格常数等与钙钛矿 KTN越匹配 ,越有利于 KTN的取向生长 ,并在 Sr Ti O3( 1 0 0、1 1 1 )基片上制得纯钙钛矿、高取向甚至外延的 KTN薄膜。The structure of KTN thin films on vary substrates and bottom electrodes firmed by Sol Gel method were studied.The effects of the chemical stability,structure and thermal properties of substrates and bottom electrode materials on the formation of KTN thin films are discussed and it is explained why the perocskite structure KTN films on MgO(100)、Si(100)、SiO 2、Pt/Si、SnO 2(Sb)/SiO 2 substrates and bottom electrodes can not be obtained.The structure,crystal lattice constant of subtracts which don’t react with KTN match the perovskite KTN,the perovskite KTN films can easily grow orientedly on it,highly oriented KTN thin films of perovskite structure were successfully prepared on SrTiO 3(100、111) substrates.

关 键 词：基片 底电极KTN薄膜 取向 

分 类 号：O484[理学—固体物理]