SnO_2压敏材料势垒电压的测量  

The Barrier Voltage Measurement of SnO_2 Varistor

作　　者：王勇军[1] 王矜奉[1] 陈洪存[1] 董火民[1] 张沛霖[1] 钟维烈[1] 赵连义 

机构地区：[1]山东大学物理系,济南250100 [2]山东省防雷中心,济南250100

出　　处：《压电与声光》2000年第3期197-199,共3页Piezoelectrics & Acoustooptics

基　　金：山东省自然科学基金资助项目

摘　　要：依照缺陷势垒模型 ,将压敏电阻器视为双向导通的二极管 ,应用半导体理论对低电压情况下的电流 -电压关系数据进行了处理 ,得到了 Sn O2 - Zn O- Nb2 O5压敏材料的势垒电压。选取的 4个测量温度得到的结果是相同的 ,保证了实验结果的正确性。The semiconductor theory about the conduction of zener diode was applied to the SnO 2 ZnO 2 Nb 2O 5 varistor since it is analogous to two back to back diodes according to the defect barrier model.The current voltage characteristics were measured at the low voltage region.The values of the barrier voltage were determined by the interception of the I V plot.The measurement was carried out at different temperatures and identical results were obtained.

关 键 词：压敏电阻 势垒电压 氧化锡 

分 类 号：TN304.21[电子电信—物理电子学]