量子点场效应晶体管单光子探测器的设计与特性分析  

Design and Characteristics Analysis of Single Photon Detector Based on Quantum-Dot Field Effect Transistor

作　　者：王红培[1] 王广龙[1] 邱鹏[1] 高凤岐[1] 卢江雷[1] 

机构地区：[1]军械工程学院纳米技术与微系统实验室,河北石家庄050003

出　　处：《中国激光》2013年第1期248-252,共5页Chinese Journal of Lasers

摘　　要：量子信息技术的发展对单光子探测器提出了更高的性能要求,新型的量子点单光子探测器具有很好的性能和发展潜力。研究了一种基于量子点场效应晶体管(QDFET)的单光子探测器,介绍了QDFET的光电导增益原理,对QDFET进行了材料选择和结构设计,并重点对QDFET的量子化光电导和增益的噪声平衡进行了实验分析,结果表明QDFET单光子探测在灵敏度、光子响应、光子分辨等方面具备很好的特性。The developing of quantum information technology calls for single photon detector to have higher capability. As a new-style single photon detector, quantum-dot based single photon detector has good potential. A single photon detector based on quantum-dot field effect transistor （QDFET） is researched. The photoconductive gain mechanism of QDFET is introduced. Then the material is chosen and the structure is designed. It＇s laid stress on the experimental analysis of photoconductance quantization and noise equations. The results indicate that the single photon detection based on QDFET has great characteristic in sensitivity, photon response and photon resolution ratio.

关 键 词：探测器 单光子 量子点场效应晶体管 异质结 量子点接触 

分 类 号：O433[机械工程—光学工程] TN312.2[理学—光学]