808nm大功率半导体激光器的低频电噪声  

Low frequency Electrical Noise of 808 nm High power Semiconductor Laser

作　　者：胡贵军[1] 石家纬[1] 李红岩[1] 齐丽云[1] 赵磊[1] 张锋刚 张素梅[1] 

机构地区：[1]吉林大学电子工程系

出　　处：《吉林大学自然科学学报》2000年第3期58-60,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：长春光机学院高功率激光国家重点实验室开放课题和吉林省科委课题基金 !(批准号 :19990 5 2 6-1)

摘　　要：对 8 0 8 nm大功率半导体激光器的低频电噪声进行测试 ,给出器件电噪声与频率、注入电流之间关系 ,讨论噪声与电、光导数之间的关系 .结果表明 ,80 8nm大功率半导体激光器的电噪声在低频段主要为 1 /f噪声 。The low frequency electrical noise of 808 nm high power semiconductor laser was measured, the experimental results of the devices electrical noise vs frequency and bias current were given, and the relations between noise with electric and optical derivative were discussed. The results indicate that 808 nm high power semiconductor lasers noise is 1/ f noise mainly in low frequency and has the maximum value around the threshold.

关 键 词：半导体激光器 大功率 低频电噪声 测试 

分 类 号：TN248.4[电子电信—物理电子学]