在不同衬底上用纳米引晶法选择性生长金刚石薄膜  

Selective Growth of Polycrystalline Diamond Film by Selectively Seeding with Nanocrystalline Diamond Powder

作　　者：杨洁[1] 顾鼎熙 石勇[1] 李迅[2] 王成新[2] 韩永昊[2] 刘洪武[2] 

机构地区：[1]空军长春飞行学院 [2]吉林大学超硬材料国家重点实验室,长春130023

出　　处：《吉林大学自然科学学报》2000年第3期61-64,共4页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：国家自然科学基金! (批准号 :5 963 10 60和 695 760 12 )

摘　　要：采用光刻工艺和纳米引晶技术 ,在抛光的单晶 Si衬底上形成带有超细金刚石纳米粉的引晶图案 ,并利用引晶处与抛光 Si处金刚石成核密度的巨大差异 ,在光滑的 Si3N4 和 Mo衬底上实现金刚石薄膜的高选择性生长 .A novel process has been proposed to grow the polycrystalline diamond film selectively by selectively seeding with the diamond powder of 5 nm average size. A high selectivity was achieved in the process, which had an advantage over the conventional SAD method. The process requires only a few steps and avoids the surface defects in the routine process. Moreover, the diamond films were selectively grown on Si 3N 4 and Mo substrates by the new method.

关 键 词：纳米引晶 金刚石薄膜 选择性生长 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]