阳极氧化法制备壁垒型Al_2O_3绝缘膜的研究  

Fabrication of Barrier Anodic Alumina Insulation Membrane by Anodization

作　　者：洪春燕[1] 叶芸[1] 郭凡[1] 李松[1] 林之晓[1] 蒋亚东[2] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2013年第1期35-40,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61106053);教育部博士点博导基金项目(20103514110007);电子薄膜与集成器件国家重点实验室开放课题(KFJJ200916)

摘　　要：采用阳极氧化法在Al膜上制备具有绝缘性能的壁垒型Al2O3膜,研究不同成分比例的电解液、阳极氧化电压对壁垒型Al2O3膜性能的影响。利用能量分散谱和扫描电镜观测壁垒型Al2O3膜的元素组成、表面形貌及厚度,并对其绝缘耐压性进行了测试。结果表明,所制备的Al2O3膜厚度均为纳米量级,在95%乙二醇,1.9%癸二酸铵,3.1%硼酸的电解液中,以300V恒定电压制备的壁垒型Al2O3膜拥有很好的绝缘性能,击穿场强可达5.25MV/cm。The barrier anodic alumina membranes with good insulation performance were prepared via chemical route by anodization of pure Al coatings,1 μm thick,deposited by magnetron sputtering on glass substrates.The impacts of the preparation conditions,including the compositions of the electrolytes,and anodization voltage on its property of the membrane were evaluated.Its microstructures were characterized with scanning electron microscopy and energy dispersive spectroscopy.Under the optimized conditions：a solution of 95% glycol,1.9% ammonium sebacate,and 3.1 boracic acid,the high quality Al2O3 membrane was obtained.The measured results show that the Al2O3 membrane,a few nm in thickness,possesses an excellent insulation,with a breakdown field of 5.25 MV/cm.

关 键 词：阳极氧化 壁垒型Al2O3膜 绝缘性能 击穿场强 

分 类 号：O462.4[理学—电子物理学]