^(60)Co和高能电子在硅中NIEL的Monte Carlo计算  

A MONTE CARLO CALCULATION OF NIEL IRRADIATION-INDUCED IN SILICON BY ^(60)Co GAMMAS AND ENERGETIC ELECTRONS

作　　者：陈世彬[1,2] 陈雨生[1] 黄流兴[1] 张义门[3] 

机构地区：[1]西北核技术研究所五室 [2]西安电子科技大学微电子所,西安710071 [3]西安电子科技大学微电子所

出　　处：《光子学报》2000年第5期415-419,共5页Acta Photonica Sinica

基　　金：国防预研基金资助项目

摘　　要：本文提出了计算高能电子和 非电离能量损失 (NIEL)的 Monte Carlo方法 ,首次利用 Monte Carlo方法计算了高能电子和 6 0 Co 的 NIEL.给出了电子和 6 0 Co 在半导体硅材料中产生的 NIEL和缺陷分布 .计算结果与文献的比较表明模型是合理的 .A Monte Carlo method of calculating non ionizing energy loss (NIEL) induced by electrons and gammas in materials was presented.Based on this method,a computer program nemed NIELEG was written which can be used in any materials of layered structure to calculate damage of coupled electrons and gamma.In this paper,the damages irradiation induced by below 10MeV electrons and 60 Co  in silicon were calculated with the program.These results lead us to conclude that the method is available.

关 键 词：辐射损伤 钴60 硅 高能电子 NIEL 蒙特卡罗 

分 类 号：TN304.12[电子电信—物理电子学]