Gd_3Ga_5O_(12):Ag薄膜电致发光材料的制备及其发光性质  

PREPARATION AND LUMINESCENT CHARACTERISTICS OF AN OXIDE PHOSPHOR Gd_3Ga_5O_(12):Ag

作　　者：许秀来[1] 徐征[1] 侯延冰[1] 苏艳梅[1] 徐叙 

机构地区：[1]北方交通大学光电子技术研究所

出　　处：《物理学报》2000年第7期1390-1393,共4页Acta Physica Sinica

基　　金：高等学校博士学科点专项科研基金! (批准号 :970 0 0 40 1);国家高技术研究发展计划! (批准号 :715 0 0 82 );国家自然科学基金! (

摘　　要：研究了Gd3 Ga5O12 :Ag材料的制备及其发光性质 .Gd3 Ga5O12 :Ag材料通过固相反应法制得 ,采用X射线衍射法分析了材料的结晶度及成分 .用电子束蒸发将该材料制备成交流的薄膜电致发光器件 ,得到了较好的蓝紫色发光 ,发光峰分别位于 397和 46 7nm .通过对材料的光致发光和激发光谱的研究和比较 ,得出 397和 46 7nm分别来自于氧空位和Ag+ 的发光 .A composite oxide material Gd 3 Ga 5 O 12 :Ag was prepared by solid state reaction. The composition and the crystallinity of phosphor were determined by X\|ray diffraction. The thin film electroluminescence (EL) devices based on Gd 3 Ga 5 O 12 :Ag were prepared by electron beam evaporation. We have obtained a good UV\|blue EL emission with a peak at 397?nm and a shoulder at 467?nm. The EL peaks located at 397 and 467?nm are found to originate from the oxide vacancies and 4d\+95s\+0 to 4d 10 of Ag\++, respectively.

关 键 词：Gd3Ga5O12:Ag 电致发光 光致发光 薄膜 半导体 

分 类 号：O484.41[理学—固体物理]