SiO_2-GeO_2薄膜二次谐波产生的稳定性研究  

SHG Stability of Thermally Poled SiO_2-GeO_2 Films

作　　者：徐志凌[1] 杨鹏[1] 刘丽英[1] 徐雷[1] 侯占佳[1] 王文澄[1] 

机构地区：[1]复旦大学物理系三束材料改性国家重点实验室,上海200433

出　　处：《光学学报》2000年第7期1004-1008,共5页Acta Optica Sinica

基　　金：国家自然科学基金!(批准号 :19774 0 18);国家攀登计划资助的课题

摘　　要：利用溶胶 -凝胶 (sol- gel)方法制备了 Si O2 - Ge O2 薄膜 ,并测量了薄膜样品电场极化后光学二次谐波信号的相对大小和时间弛豫特性。通过对不同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较 ,表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响 。Sol gel method was used to prepare SiO 2 GeO 2 films. The relative intensity of second harmonic generation(SHG) signals of the thermally poled films and their relaxations were measured. By comparing the decay of second harmonic generation of the films with different substrates and under different temperatures,it is shown than the stability of charge near the interface between the film and substrate is influenced by the bulk electric resistance of the substrate,and this charge character consequently influences the SHG stability of the film.

关 键 词：SiO22-GeO2 二次谐波产生 薄膜 稳定性 

分 类 号：O484.4[理学—固体物理]