Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al_2O_3 Thin Films  

作　　者：熊玉卿 桑利军 陈强 杨丽珍 王正铎 刘忠伟 

机构地区：[1]Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics [2]Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication

出　　处：《Plasma Science and Technology》2013年第1期52-55,共4页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(No.11175024);the Beijing Natural Science Foundation(No.1112012);Science and Technology on Surface Engineering Laboratory;the Beijing Education Committee(No.BM201002),2011BAD24B01,KM201110015008,KM201010015005 and PHR20110516

摘　　要：Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer deposition （ALD） device with Al（CH3）3 （trimethylaluminum; TMA） and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was in- troduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction （XRD）, an X-ray photo- electric spectroscope （XPS）, a scanning electron microscope （SEM）, an atomic force microscope （AFM） and a high-resolution transmission electron microscope （HRTEM）. It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between theAl2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can growAl2O3 films with an excellent quality at a high growth rate at ambient temperature.Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer deposition （ALD） device with Al（CH3）3 （trimethylaluminum; TMA） and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was in- troduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction （XRD）, an X-ray photo- electric spectroscope （XPS）, a scanning electron microscope （SEM）, an atomic force microscope （AFM） and a high-resolution transmission electron microscope （HRTEM）. It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between theAl2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can growAl2O3 films with an excellent quality at a high growth rate at ambient temperature.

关 键 词：ECR ALD Al2O3thin film TMA HRTEM 

分 类 号：TN304.21[电子电信—物理电子学]