Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films  

作　　者：袁强华 殷桂琴 宁兆元 

机构地区：[1]Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University [2]Department of Physics, Soochow University

出　　处：《Plasma Science and Technology》2013年第1期86-88,共3页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(No.11165012);China Postdoctoral Science Foundation Funded Project(2011M501494,2012T50831);Project of Graduate Supervisor of Gansu Province(No.1001-01);Project of Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province,Project of Northwest Normal University(NWNU-LKQN-11-9,NWNU-KJCXGC-03-62)

摘　　要：The commercially available hydrogensilsesquioxane （HSQ） offers a low dielectric constant. In this paper, the impact of oxygen plasma treatment has been investigated on the low- k HSQ films. Fourier transform infrared （FTIR） spectroscopy was used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds after treatments. C-V and I-V measurements were used to determine the dielectric constant, the electronic resistivity and the breakdown electric field, respectively. The result indicates that oxygen plasma treatment will damage the HSQ films by removing the hydrogen content. Both dielectric constant and leakage current density increase significantly after oxygen plasma exposure. The dielectric constant and leakage current density can both be decreased by annealing at 350 ℃ for 1.5 h in nitrogen ambient. The reason is that the open porous of the external films can be modified and density of thin film be increased. The rough surface can be smoothed.The commercially available hydrogensilsesquioxane （HSQ） offers a low dielectric constant. In this paper, the impact of oxygen plasma treatment has been investigated on the low- k HSQ films. Fourier transform infrared （FTIR） spectroscopy was used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds after treatments. C-V and I-V measurements were used to determine the dielectric constant, the electronic resistivity and the breakdown electric field, respectively. The result indicates that oxygen plasma treatment will damage the HSQ films by removing the hydrogen content. Both dielectric constant and leakage current density increase significantly after oxygen plasma exposure. The dielectric constant and leakage current density can both be decreased by annealing at 350 ℃ for 1.5 h in nitrogen ambient. The reason is that the open porous of the external films can be modified and density of thin film be increased. The rough surface can be smoothed.

关 键 词：thin films oxygen plasma exposure ANNEALING 

分 类 号：O53[理学—等离子体物理]