p型CuInS_2花状微球的液相可控合成及其电学性能表征  

Solution-based Controllable Synthesis of p-type CuInS_2 Flower-like Microspheres and Their Electrical Characterization

作　　者：吴义良[1] 周国方[1] 王文坚[1] 张梓晗[1] 吴春艳[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《发光学报》2013年第2期154-159,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金青年基金(20901021)资助项目

摘　　要：以十六烷基三甲基溴化铵(CTAB)为表面活性剂,在乙二醇(EG)中进行溶剂热反应,成功合成了四方晶系CuInS2花状微球。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、光电子能谱(XPS)以及紫外-可见吸收光谱等表征其形貌、结构及成分,并构建了基于其的底栅型场效应器件(Back-gate FET)。实验结果表明:p型CuInS2微球所需合成温度为200℃,禁带宽度为1.62eV,电导率约为2S·cm-1。CuInS2微球有望用于低耗、高效CuInS2基光伏器件的制备。Tetragonal CuInS2 flower-like microspheres were successfully synthesized through the solvothermal reaction in ethylene glycol（EG） with the assistance of cationic surfactant cetyltrimethylammonium bromide（CTAB）.The morphology,structure and composition of the products were characterized by X-ray diffraction（XRD）,scanning electron microscope（SEM）,photoelectron spectroscopy（XPS） and UV-Vis spectroscopy,respectively.XRD spectra showed that the lowest temperature for the synthesis of pure CuInS2 was 200 ℃.CuInS2 microspheres obtained at the temperature 200 ℃ and 220 ℃ were verified to be Cu-rich and In-rich,respectively.UV-Vis spectrum showed that there existed intensity absorption in the visible region for CuInS2 microspheres obtained at 200 ℃.The band gap was estimated to be ～1.62 eV,which is very close to that of bulk CuInS2.Back-gate field effect transistor based on CuInS2 microspheres obtained at 200 ℃ was constructed and their electrical characterizations indicated that as-prepared CuInS2 microspheres were p-type semiconductor with conductivity of ～2 S·cm-1,which is similar to that of p-type CuInS2 films.As-prepared CuInS2 microspheres showed their potential application in the fields of low-cost and high-performance photovoltaic devices.

关 键 词：CuInS2 微球 场效应器件 光伏器件 

分 类 号：O611.6[理学—无机化学]