HCMOS器件的γ辐射效应  

γ Radiation Effects of HCMOS Devices

作　　者：楼滨乔[1] 薛志华[1] 刘美丽 

机构地区：[1]北京大学技术物理学系

出　　处：《北京大学学报（自然科学版）》1991年第3期378-384,共7页Acta Scientiarum Naturalium Universitatis Pekinensis

摘　　要：本文介绍HCMOS器件的γ辐射损伤和退火效应的结果。HCMOS器件的静态功耗电流和动态特性对剂量十分灵敏,它们的退火效应也很明显。This paper has studied experimentally the γ radiation damage and the annealing characteristicts of HCMOS devices. The radiation damage of static current is very sensitive. The sum dose of non-damage static current are 100Gy(“on”) and 300Gy (“off”). The sum dose of damage static current are 600Gy(“on”) and 2000Gy(“off”). The shift voltage varies with sum dose. The annealing effect of static current and shift voltage is very obvious.

关 键 词：HCMOS器件 γ辐射效应 退火效应 

分 类 号：TN386.1[电子电信—物理电子学]