以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究  

Comparative Study of YBCO Films Grown on Biaxially Textured Ni Substrate and LAO Substrate by Photo-assisted Metal Organic Chemical Vapor Deposition

作　　者：李善文[1] 李伟[1] 李国兴[1] 张宝林[1] 周本初[1] 陶伯万[2] 高忠民[3] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,长春130012 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [3]吉林大学化学学院无机合成与制备化学国家重点实验室,长春130012

出　　处：《高等学校化学学报》2013年第3期527-531,共5页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:51002063)资助

摘　　要：采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.A comparative study of YBa2Cu3O7-x（YBCO） films grown on biaxially textured Ni substrates [using CeO2/YSZ/Y2O3（YSZ is Y stabilized ZrO2） as buffer layers] and LaAlO3（100） substrates by photo-assisted metal organic chemical vapor deposition（MOCVD） was carried out.It is found that the growing temperature of YBCO film grown on Ni substrate is lower about 30 ℃ than that on LAO substrate.Besides,the growth rate on Ni substrate is higher than that on LAO.The phenomena can be explained by the fact that the thermal conduction of Ni substrate is better than LAO.The critical superconducting current density Jc of YBCO films grown on Ni substrate and LAO substrate are about 0.5 and 1.8 MA/cm2,respectively.

关 键 词：YBa2Cu3O7-x(YBCO) Ni衬底 金属有机物化学气相沉积(MOCVD) 光辅助MOCVD 

分 类 号：O614[理学—无机化学] O511[理学—化学]