基于量子流体动力学模型的半导体器件模拟  

Semiconductor device simulation based on quantum fluid dynamics model

作　　者：董果香[1] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054

出　　处：《电子设计工程》2013年第2期140-143,共4页Electronic Design Engineering

摘　　要：基于量子流体动力学模型,自主编制程序开发了半导体器件仿真软件。其中包括快速、准确数值离散方法和准确的物理模型。基于对同一个si双极晶体管的模拟,与商用软件有近似的仿真结果。表明量子流体动力学模型具有可行性,同时也表明数值算法和物理模型的正确性。The quantum hydrodynamic model-based, self-preparation program was developed semiconductor devices simulation software. Including fast and accurate numerical diseretization method and an accurate physical model. Based on a Si bipolar transistor analog approximate simulation results with the commercial software. That quantum hydrodynamic model is feasible, but also shows the correctness of numerical algorithms and physical models.

关 键 词：量子流体动力学模型 仿真 物理模型 数值计算 

分 类 号：TN303[电子电信—物理电子学]