基于ZnO/Si结构的声表面波器件设计研究  

Design Study on SAW Devices Based on ZnO/Si Structure

作　　者：何兴理[1] 周剑[1] 金浩[1] 董树荣[1] 王德苗[1] 

机构地区：[1]浙江大学信息与电子工程学系,浙江杭州310027

出　　处：《压电与声光》2013年第1期1-3,9,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学重点基金资助项目(60936002);国家自然科学基金资助项目(61171038)

摘　　要：微机电系统(MEMS)工艺已被广泛用于制造各种硅基薄膜器件。声表面波(SAW)器件是性能优良的MEMS器件。该文利用多物理耦合场软件COMSOL Multiphysics仿真了氧化锌/硅(ZnO/Si)结构SAW谐振器,并得到其S11参数。对应于仿真,该文制造了该种结构的SAW器件。实验所用的ZnO通过射频磁控溅射制备,所制备的ZnO具有良好的(002)取向。实验测得的ZnO/Si结构SAW器件的中心频率为111.6MHz,与仿真结构接近。MEMS process has been widely used to manufacture a variety of silicon-based thin film devices. Surface acoustic wave（SAW） device is a kind of MEMS devices with excellent properties. In this paper, The ZnO/Si based SAW devices were simulated by COMSOL Multiphysics and the S11 parameters were obtained. According to the simulation results, we manufactured the ZnO/Si based SAW devices. ZnO thin film with good （002） orientation was deposited by radio frequeney（RF）-magnetron-sputtered. The ZnO/Si based SAW device with center frequency of 111.6 MHz has been obtained and the result is close to that obtained by the simulation structure.

关 键 词：微机电系统(MEMS) 声表面波 COMSOL 氧化锌 硅 

分 类 号：TN384[电子电信—物理电子学]