Ba0．6Sr0．4TiO3薄膜的耐压特性研究  

Study on Voltage-Withstand Property of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films

作　　者：朱斌[1] 张洪波[1] 王文君[1] 李司中[1] 赵强[1] 陈宏伟[1] 杨传仁[1] 张继华[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2013年第1期112-115,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(51172035)

摘　　要：采用射频磁控溅射法制备了Ba0.6Sr0.4TiO3(BST)薄膜,研究了基片、退火温度及膜厚对薄膜耐压特性的影响。结果显示,铝酸镧(LaAlO3)基片上制备的BST薄膜表面较平整,有较好的耐压;随着退火温度从750℃提高到850℃,BST薄膜晶粒长大,电击穿概率有所增加,750℃是一个较合理的退火温度。在优化的工艺条件下,BST薄膜耐压可达125V/μm。Ba0.6 Sr0.4 TiO3 （BST） thin films were prepared by radio-frequency magnetron sputtering method and the effect of the substrate,anneaIing temperature and film thickness on the voltage-withstand property was studied. The result shows that the BST thin films deposited on LaAIO2 substrates has smoother surface and higher voltagewithstand property. The crystalline grain size of the BST thin film become larger with the annealing temperature increased from 750 ℃ to 850 ℃ ,and the electrical breakdown probability has been increased to some extent. In our re- suits,750 ℃ is a more reasonable temperature for the films annealing. At the optimized process, BST thin film can withstand more than 125 V/μm.

关 键 词：BA0 5Sr0 4Ti03(BST)薄膜 铁电 耐压 集成电容 

分 类 号：TM215.3[一般工业技术—材料科学与工程] TN384[电气工程—电工理论与新技术]