IGBT芯片测温方法与温度分布研究  

Research on Temperature Measurement Methods and Distribution of IGBT Chip

作　　者：刘宾礼[1] 陈明[1] 唐勇[1] 王阔厅[2] 

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033 [2]海军潜艇学院,青岛266071

出　　处：《武汉理工大学学报（交通科学与工程版）》2013年第1期144-148,共5页Journal of Wuhan University of Technology（Transportation Science & Engineering）

基　　金：国家自然科学基金重点项目资助(批准号:50737004)

摘　　要：推导出红外探测温度与真实温度之间的关系.通过确定合适的发射率修正方法,得到了IG-BT芯片的真实温度分布,得出芯片中心温度高于边缘温度,纠正了以往对该问题的错误认识,通过发射率修正和实验数据验证了该结论的正确性.The theory on detecting temperature with infrared thermal imaging system is discussed in detail.The relationship between infrared acquisition temperature and real temperature is deduced.By selecting an appropriate emissivity modification method,the real temperature distribution of IGBT chip is detected,and the conclusion that the center temperature is higher than the vicinity is presented.Therefore,the former inaccurate viewpoint is rectified and it is proved by the emissivity modification and integrated experiment data.It can be significant for the investigation on IGBT failure mechanism and analysis of reliability.

关 键 词：IGBT芯片 红外热成像 温度分布 发射率修正 

分 类 号：TN21[电子电信—物理电子学]