Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides  

作　　者：陈可勇 冯雪 黄栩东 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University

出　　处：《Chinese Optics Letters》2013年第2期88-90,共3页中国光学快报（英文版）

基　　金：supported by the National Basic Research Program of China(Nos.2011CBA00608 and 2011CBA00303);the National Natural Science Foundation of China(Nos.61036011 and 61036010)

摘　　要：Surface-plasmon （SP） enhancement of amorphous-silicon-nitride （a-SiNx） light emission with single-layer gold （Au） waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm.Surface-plasmon （SP） enhancement of amorphous-silicon-nitride （a-SiNx） light emission with single-layer gold （Au） waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm.

关 键 词：GOLD Light emission Photoluminescence Plasma enhanced chemical vapor deposition PLASMONS Silicon Silicon nitride WAVEGUIDES 

分 类 号：TN25[电子电信—物理电子学]