注氘纯钒中位错环的原位观察  

Evolution of Dislocation Loops in Deuterium-ion Implanted Vanadium Under Electron Irradiation

作　　者：姜少宁[1] 万发荣[1] 李顺兴[1] 龙毅[1] 刘平平[1] 大貫惣明[2] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]北海道大学工学研究院,札幌0608628

出　　处：《材料工程》2013年第2期55-59,共5页Journal of Materials Engineering

基　　金：国家自然科学基金(51071021);国家重点基础研究发展计划基金(2011GB108002)

摘　　要：研究了室温注氘纯钒在电子辐照下位错环的变化。纯钒室温注氘后分别在500,550℃通过超高压透射电子显微镜(HVEM)观察分析了在电子辐照下的微观结构变化。结果表明:500℃电子辐照时,位错环没有明显的变化;在550℃时效后形成的位错环尺寸比500℃略有增加,在550℃继续进行电子辐照,位错环在尺寸和密度上同样没有变化。与纯铁相比,纯钒中的缺陷团簇在辐照下的稳定性更高。The evolution of dislocation loops in deuterium-ion implanted pure vanadium under electron irradiation was investigated. Pure vanadium implanted by deuterium ions at room temperature was ir- radiated by electrons using High Voltage Electron Microscope （HVEM） at 500℃ and 550℃, respec- tively. Under electron irradiation at 500℃ the dislocation loops remained essentially the same size. The size of dislocation loops formed by aging at 550℃ was a little larger than that formed by aging at 500℃. However, the dislocation loops also showed no change under electron irradiation at 550℃. Va- nadium has greater stability of defect clusters under irradiation than iron.

关 键 词：纯钒 注氘 位错环 

分 类 号：TL67[核科学技术—核技术及应用]