气压浸渗制备Al-Si-Al结构中硅的溶解及控制  

Control of Silicon Dissolution in Al-Si-Al Sandwich Composite Fabricated by Gas Pressure Infiltration

作　　者：于威[1] 于家康[1] 陈代刚[1] 袁曼[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《热加工工艺》2013年第4期89-92,共4页Hot Working Technology

基　　金：国家自然科学基金资助项目(60776019)

摘　　要：采用气压浸渗法制备了Al-Si-Al三明治结构的复合材料来研究硅的溶解及控制。光学显微镜观察显示:在没有SiO2的情况下,硅片被铝合金溶解,其界面失去平直而变成波纹的形状;采用高温氧化的方法是硅片表面生成一层SiO2,这可有效防止硅的溶解,其界面保持平直。SEM及EDS分析表明,Al-Si界面结合良好,界面处富含氧元素,最终界面反应产物为MgAl2O4、Al2O3。A1-Si-A1 sandwich composite fabricated by gas pressure infiltration was used to study the silicon dissolution and its control. The microstructure reveals that silicon plate is dissolved by A1 alloy and interface shifting from straight line to wave shape in the composite without the oxidation of silicon plates. Silicon dissolution is controlled and the interface keeps straight in the composite with the oxidation of silicon plates. The A1-Si interface bonds well and O element is rich in interface. Moreover, the final interfacial products are MgA1204 and A1203.

关 键 词：气压浸渗 硅的氧化 硅的溶解 界面 

分 类 号：TB33[一般工业技术—材料科学与工程]