Cu掺杂CaCu_3Ti_4O_(12)陶瓷的介电性能和晶界特征  

Dielectric properties and grain boundary characteristic of Cu-doped-CaCu_3Ti_4O_(12) ceramics

作　　者：莫兴婵[1] 韦小圆[1] 韦成峰 郑少英[1] 覃远东 刘来君[1] 

机构地区：[1]桂林理工大学材料科学与工程学院,广西桂林541004 [2]先进半导体材料(深圳)有限公司,广东深圳518103 [3]广西新未来科技股份有限公司,广西北海536000

出　　处：《电子元件与材料》2013年第3期33-36,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.51002036);广西自然科学基金资助项目(No.C013002;No.BA053007);广西科学研究与技术开发计划资助项目(No.桂科攻12118017-13)

摘　　要：采用传统的固相反应工艺制备了Cu掺杂的CaCu3Ti4O12(Cu-CCTO)陶瓷。采用Schottky热电子发射模型研究了其晶界特征。研究了保温时间对Cu-CCTO陶瓷的介电性能和晶界特征的影响。结果表明:保温时间从1 h延长到30 h,Cu-CCTO陶瓷在100 kHz下的介电损耗保持在0.135,相对介电常数由3 600增至20 000以上。随着保温时间的延长,Cu-CCTO陶瓷的I-V非线性系数由1.8增至3.37,但击穿电场强度却由1 500 V/cm降至约700 V/cm。随着保温时间的延长,Cu-CCTO陶瓷的势垒高度和耗尽层宽度均增加。Cu-doped CaCu3Ti4O12（Cu-CCTO） ceramics were prepared by traditional solid reaction. The Sehottky thermion launch model was adopted to obtain the grain boundary characteristic. The influences of holding time on the dielectric properties and grain boundary characteristics of Cu-CCTO were investigated. The results show that the dielectric loss at 100 kHz remains 0.135 but the relative permittivity increases from 3 600 to more than 20 000 with the increasing of holding time from 1 h to 30 h. Meanwhile, the nonlinear coefficient of the Cu-CCTO ceramic increases from 1.8 to 3.37, but the breakdown electric field intensity decreases from about 1 500 V/cm to 700 V/cm. Both potential barrier height and depletion layer width increase with the increasing of holding time.

关 键 词：CaCu3Ti4O12(CCTO) CU掺杂 Schottky热电子发射模型 晶界效应 势垒高度 非线性I-V特征 介电频谱 复阻抗谱 

分 类 号：TM28[一般工业技术—材料科学与工程]