一种850nm氧化限制型垂直腔面发射激光器的设计  

A Design of 850 nm Oxide-confined VCSEL

作　　者：丁锋[1,2] 张靖[2] 王品红[2] 田坤[2] 赵开梅[2] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2013年第1期56-58,共3页Semiconductor Optoelectronics

摘　　要：采用PICS3D软件建立了850nm氧化限制型垂直腔面发射激光器(VCSEL)的仿真模型,通过优化量子阱有源区的阱和垒的个数、合理选取分布式布拉格反射镜(DBR)的材料以及对数,设计了一种850nm氧化限制型VCSEL。在10μm氧化孔径下,与商用的850nm氧化限制型VCSEL相比,其阈值电流从1.8mA降至1.5mA,斜率效率从0.3W/A提升到0.65W/A。A simulation model of 850 nm oxide-confined vertical cavity surface emitting lasers （VCSELs） was established by PICS3D, in which, the number of well and barrier of the active layer was optimized and the material and the number of distributed bragg reflector （DBR） were appropriately chosen. Compared with commercial 850 nm oxide-confined VCSELs, the threshold current of the designed VCSEL drops from 1.8 mA to 1.5 mA, and the slope efficiency rises from 0.3 W/A to 0.65 W/A under the oxide aperture of 10 μm.

关 键 词：垂直腔面发射激光器 量子阱 氧化孔径 阈值电流 斜率效率 

分 类 号：TN242[电子电信—物理电子学]